SiC merged Schottky diodes boost power supply reliability ...

The devices use a merged PIN Schottky (MPS) design to combine high surge current robustness with low forward voltage drop, capacitive charge, and reverse leakage current to increase efficiency and reliability in switching power designs.

The RoHS-compliant and halogen-free diodes have passed higher temperature reverse bias (HTRB) testing of 2000 hours and temperature cycling testing of 2000 thermal cycles. This is double the testing hours and cycles of AEC-Q101 requirements.

Typical applications for the devices will include AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters for energy generation and exploration applications.

The SiC diodes range from 4A to 40A in TO-22OAC 2L and TO-247AD 3L through-hole and D²PAK 2L (TO-263AB 2L) surface-mount packages. The MPS structure reduces the forward voltage drop by 0.3 V compared to previous-generations while their forward voltage drop times capacitive charge — a key figure of merit (FOM) for power efficiency — is 17 % lower.

The typical reverse leakage current is 30 % lower at room temperature and 70 % lower at high temperature than the closest competing solution. This reduces conduction losses to ensure high system efficiency during light loads and idling. Unlike ultrafast diodes, the Gen 3 devices have virtually no recovery tail, which further improves efficiency.

Compared to silicon diodes with comparable breakdown voltages, the SiC devices offer higher thermal conductivity, lower reverse current, and shorter reverse recovery times. The diodes’ reverse recovery times are nearly temperature-independent, enabling operation at higher temperatures to +175 °C without the shifts in power efficiency caused by switching losses.

Parts #

IF(AV) (A)

IFSM (A)

VF at IF (V)

QC (nC)

Configuration

Package

VS-3C04ET07S2L-M3

4

29

1.5

12

Single

D²PAK 2L

VS-3C06ET07S2L-M3

6

42

1.5

17

Single

D²PAK 2L

VS-3C08ET07S2L-M3

8

54

1.5

22

Single

D²PAK 2L

VS-3C10ET07S2L-M3

10

60

1.46

29

Single

D²PAK 2L

VS-3C12ET07S2L-M3

12

83

1.5

34

Single

D²PAK 2L

VS-3C16ET07S2L-M3

16

104

1.5

44

Single

D²PAK 2L

VS-3C20ET07S2L-M3

20

110

1.5

53

Single

D²PAK 2L

VS-3C04ET07T-M3

4

29

1.5

12

Single

TO-220AC 2L

VS-3C06ET07T-M3

6

42

1.5

17

Single

TO-220AC 2L

VS-3C08ET07T-M3

8

54

1.5

22

Single

TO-220AC 2L

VS-3C10ET07T-M3

10

60

1.46

29

Single

TO-220AC 2L

VS-3C12ET07T-M3

12

83

1.5

34

Single

TO-220AC 2L

VS-3C16ET07T-M3

16

104

1.5

44

Single

TO-220AC 2L

VS-3C20ET07T-M3

20

110

1.5

53

Single

TO-220AC 2L

VS-3C16CP07L-M3

2 x 8

54

1.5

22

Common cathode

TO-247AD 3L

VS-3C20CP07L-M3

2 x 10

60

1.46

29

Common cathode

TO-247AD 3L

VS-3C40CP07L-M3

2 x 20

110

1.5

53

Common cathode

TO-247AD 3L

Samples and production quantities of the new SiC diodes are available now, with lead times of eight weeks.

www.Vishay.com.